https://doi.org/10.1140/epjp/s13360-022-02938-7
Regular Article
Effects of external fields on the nonlinear optical properties of an n-type quadruple δ-doped GaAs quantum wells
1
Department of Naval Architecture and Marine Engineering, Faculty of Engineering, Piri Reis University, 34940, Istanbul, Turkey
2
Nanomaterials Technology Unit, Basic and Applied Scientific Research Center (BASRC), College of Science of Dammam Abdulrahman Bin Faisal University, P. O. Box 1982, 31441, Dammam, Saudi Arabia
3
Department of Physics, College of Sciences for Girls, Imam Abdulrahman Bin Faisal University, Dammam, Saudi Arabia
4
Centro de Investigación en Ciencias-IICBA, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, CP 62209, Cuernavaca, Morelos, Mexico
5
Faculty of Science, Department of Physics, Sivas Cumhuriyet University, 58140, Sivas, Turkey
Received:
21
February
2022
Accepted:
9
June
2022
Published online:
25
June
2022
Linear, third-order, total optical absorption and relative refractive index change coefficients are investigated for an n-type -doped GaAs/Al
Ga
As quadruple quantum well with electric, magnetic as well as laser fields as external probes. The Hamiltonian operator of the quaternary
-doped well is written with the inclusion of laser dressed potential term and electric, magnetic field energy operators, in order to obtain the electronic spectrum. Optical properties are calculated by obtained electronic states within the framework of compact density matrix approach. The results show that, in the presence of external electric, magnetic and intense laser fields, the evaluated optical coefficients exhibit similar shifting characteristic with different peak magnitude variations. These findings in the optical properties of quadruple
-doped quantum wells in the presence of external fields may provide guidance to the practical studies.
© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2022