https://doi.org/10.1140/epjp/s13360-024-05490-8
Regular Article
Effects of hydrostatic pressure, temperature, and position-dependent mass on the nonlinear optical properties of triple delta-doped GaAs quantum well
1
Department of Mathematics and Science Education, Faculty of Education, Sivas Cumhuriyet University, 58140, Sivas, Türkiye
2
Faculty of Science, Department of Physics, Sivas Cumhuriyet University, 58140, Sivas, Türkiye
3
Nanomaterials Technology Unit, Basic and Applied Scientific Research Center (BASRC), College of Science of Dammam, Imam Abdulrahman Bin Faisal University, P. O. Box 1982, 31441, Dammam, Saudi Arabia
4
Department of Physics, College of Sciences for Girls, Imam Abdulrahman Bin Faisal University, Dammam, Saudi Arabia
5
Centro de Investigación en Ciencias-IICBA, Universidad Autonoma del Estado de Morelos, Ave. Universidad 51001, CP 62209, Cuernavaca, MOR, Mexico
6
Sivas Cumhuriyet University, Nanophotonics Application and Research Center, 58140, Sivas, Türkiye
Received:
2
June
2024
Accepted:
23
July
2024
Published online:
5
August
2024
In this study, we thoroughly investigate the impacts of hydrostatic pressure, temperature, and position-dependent mass (PDM) on the nonlinear optical properties of asymmetric triple δ-doped GaAs quantum wells. Our analysis covers total optical absorption coefficients, relative refractive index changes, nonlinear optical rectification, second harmonic generation, and third harmonic generation. Initially, we employ PDM to solve the time-independent Schrödinger equation using the diagonalization method under effective mass and parabolic band approaches, considering pressure and temperature dependencies. Utilizing the first four energy eigenvalues and eigenfunctions, we apply the compact density matrix method to compute the system’s nonlinear optical properties numerically. The results indicate a shift in optical property peak positions toward lower (higher) energy spectra with increasing hydrostatic pressure (temperature). Furthermore, the influence of PDM shifts the system’s optical properties toward the higher energy spectrum, resembling the effect of temperature. From an experimental and theoretical perspective, one of the topics that researchers work on most is GaAs-based δ-doped systems (δ-doped heterojunction bipolar transistors, δ-doped field effect transistors, δ-multiple independent gate field effect transistors, etc.). We believe these findings will provide valuable insights for the researchers involved in GaAs-based δ-doped optoelectronic device design.
© The Author(s) 2024
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