https://doi.org/10.1140/epjp/s13360-025-06179-2
Regular Article
Insights into the coexistence of tunneling, hopping and jump models controlling the conduction phenomenon in doped lanthanum manganite compound
1
Laboratoire de Recherche Matériaux Avancés et Nanotechnologies, Institut Supérieur des Sciences Appliquées et de Technologie de Kasserine, Université de Kairouan, BP 471, 1200, Kasserine, Tunisia
2
Laboratoire de Physique des Matériaux et des Nanomatériaux Appliquée à l’Environnement, Faculté des Sciences de Gabès cite Erriadh, Université de Gabès, 6079, Gabès, Tunisia
3
Laboratoire de Physique Appliquée, Faculté des Sciences de Sfax, Université de Sfax, B.P.1171, 3000, Sfax, Tunisia
Received:
14
September
2024
Accepted:
26
February
2025
Published online:
17
March
2025
The present investigation provides different possible reasons to explain the change of the conduction process in the studied material. Doped lanthanum manganite compound was successfully prepared using the conventional solid-state method. XRD patterns are used to confirm the formation of the desired manganite compound. Under both of the temperature and frequency effects, the charge dynamics are deeply investigated. The conductivity spectra obey to double Jonscher power law (DJPL), single Jonscher power law (JPL) and the classical Drude model. Successful and unsuccessful jumps describe the AC-conductivity regime in the dispersive frequency region. In the intermediate frequencies, the transport properties are explained by classical hopping (CBH) and tunneling (NSPT) models. The low-frequency range is associated to the DC-conductivity regime. The latter shows the possibility of contribution of three hopping models in the transport properties. The change in such conduction model is synchronized with ANC temperature that describes the temperature at which the trapped centers are vanished. Such observations prove the possibility of the presence of multi-trapped centers. Shimakawa model, that assumes the presence of multi-phonons, was equally used to understand the charge carriers dynamics in the intermediate temperatures. The matching between complex impedance and conductivity analyses confirms the presence of relaxation process which is related to charge carries hopping.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2025
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
