https://doi.org/10.1140/epjp/s13360-020-00492-8
Regular Article
Transport properties of La0.9Sr0.1MnO3 manganite
1
Unité de Recherche Matériaux Avancés et Nanotechnologies (URMAN), Institut Supérieur des Sciences Appliquées et de Technologie de Kasserine, Université de Kairouan, BP 471, 1200, Kasserine, Tunisia
2
Department of Physics, College of Sciences, Qassim University, P.O. 6644, 51452, Buryadh, Saudi Arabia
3
Laboratoire de Physique des Matériaux et des Nanomatériaux Appliquée à l’Environnement, Faculté des Sciences de Gabès cité Erriadh, Université de Gabès, 6079, Gabès, Tunisia
4
Laboratoire de Physique Appliquée, Faculté des Sciences de Sfax, Université de Sfax, B.P. 1171, 3000, Sfax, Tunisia
Received:
10
March
2020
Accepted:
25
May
2020
Published online:
1
June
2020
Impedance spectroscopy technique was used to characterize the electrical properties in a wide range of frequency [40–105 Hz] and temperature [80–700 K]. As a result, AC-conductivity spectrum follows the ‘double Jonscher Power Law’ in the temperature range [80–280 K], ‘Jonscher Power Law’ in [300–600 K] range and at 700 Kit is described by the classical Drude model. Moreover, the AC-conductivity analysis reveals the contribution of multiple mechanisms in conduction. In fact, the variation of the frequency exponent ‘s1’ with temperature shows that the correlated barrier hopping mechanism is the dominated model for conduction of charge carriers beyond T = 470 K. The previous model was observed again according to the temperature dependence of the frequency exponent ‘s2.’ Then, the deduced activation energy decreases with increasing frequency suggesting the availability of hopping conduction. The temperature dependence of AC-conductivity proves the existence of metal semi-conductor transition at 200 K. At high temperatures, the DC-conductivity analysis reveals that the conduction process is dominated by thermally activated hopping of small polaron. However, at low temperatures, it is confirmed that the most suitable mechanism for conduction is the Shklovskii–Efros-Variable Range Hopping process.
© Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2020