Optical rectification coefficient of GaAs/Al x Ga1−x As Thue–Morse multiple quantum wells
Department of Physics, Faculty of Science, Qom University of Technology, Qom, Iran
Accepted: 19 May 2020
Published online: 1 June 2020
In the present work, we numerically investigate the optical properties of GaAs/Al x Ga1−x As Thue–Morse multiple-quantum-well systems (TM-MQWs) in the presence of an external electric field. We study the effects of the layers arrangements, total system length, number of layers and composition parameter x on the optical rectification coefficient of the TM-MQWs. We also consider three structural cases within which the system can be fabricated by repeating two, three or four composition parameters x 1, x 2, x 3 and x 4 in the adjacent layers. The most tunable ORC amplitude is due to the systems containing four different composition parameters and least tunable one is the systems which contain two different composition parameters. By increasing the number of layers, the ORC peak position periodically redshifts and blueshifts. We also show that by using the number of layers, total system length and composition parameter x, the ORC peak amplitudes are greatly tunable in a considerably large interval. This fact shows that the Thue–Morse MQWs are suitable candidates for optoelectronic device applications.
© Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature, 2020