https://doi.org/10.1140/epjp/s13360-024-05548-7
Regular Article
Influence of preparation conditions on CsCu2I3 yellow luminescent films based on CVD method
1
School of Physical Science and Technology, Southwest Jiaotong University, 610031, Chengdu, Sichuan, China
2
Key Laboratory of Materials and Surface Technology (Ministry of Education), School of Materials Science and Engineering, Xihua University, 610039, Chengdu, Sichuan, China
a
oukai@swjtu.edu.cn
f
ydxia@swjtu.edu.cn
Received:
17
June
2024
Accepted:
8
August
2024
Published online:
23
August
2024
The development of lead-based perovskite is constrained by its instability and toxicity. Therefore, it is imperative to develop non-toxic, stable luminescent materials. Copper-based halide perovskite is widely favored optoelectronic material due to its exceptionally high stability and excellent luminescent properties. In particular, ternary copper halides have abundant structural diversity (2D, 1D, and 0D) and adjustable electronic properties, demonstrating photoelectric properties comparable to most 3D lead-based perovskites. Exploring the optimal method of producing high-quality 1D CsCu2I3 plays a crucial role in enhancing their applicability. In this paper, a one-step low-pressure chemical vapor deposition method is proposed to produce CsCu2I3 thin film. The obtained CsCu2I3 thin film performs well in yellow emission at about 570 nm. Notably, a substantial Stokes shift of ~ 250 nm occurs due to the self-trapped excitons effect. Furthermore, the impact of composition, pressure, and temperature on the luminescence of the thin film is explored. Excellent luminescent properties are exhibited by CsCu2I3 thin films when the pressure of 10− 3 Pa and the temperatures in Zone 1 and Zone 2 are 480 °C and 170 °C, respectively. This study provides guidance on the controlled preparation of perovskite thin films via the chemical vapor deposition method.
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