https://doi.org/10.1140/epjp/s13360-024-05029-x
Regular Article
Finite element method simulation of electronic and optical properties in multi-InAs/GaAs quantum dots
1
Laboratory of Solid-State Physics (LPS), Department of Physics, Faculty of Science Dhar El Mahraz, Sidi Mohamed Ben Abdellah University, 1796, Fez, Morocco
2
SIGER Laboratory, Faculty of Sciences and Technology, Sidi Mohamed Ben Abdellah University, 2202, Fez, Morocco
Received:
19
December
2023
Accepted:
20
February
2024
Published online:
5
March
2024
The Schrödinger equation, which describes the behaviour of an electron with a single dopant inside the system, has been constructed. It is composed of three InAs cubic quantum dots (CQDs) immersed in GaAs material under the influence of an electric field applied along the x-growth direction. The equation has been solved by the finite element method within effective mass approximation. Our investigation shows that in the absence of the electric field, the binding energy (BE) reaches its maximum value when the impurity is at the centre of the system, with two smaller peaks at the other quantum dots (QDs) and a minimum at the centre of the barriers. The BE changes considerably with the electric field, especially for large dots and barriers. Both the BE and the photoionization cross-section (PCS) can be tuned by adjusting the system's dimensions and the electric field. An increase in the dot width, barrier width along the x-axis, or the electric field results in a redshift of photoionization when the impurity is at the centre of the system. The amplitude of the PCS also changes significantly, becoming more pronounced as the dot width or electric field increases and exhibiting non-monotonic behaviour in the case of the barrier width.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
