https://doi.org/10.1140/epjp/s13360-022-03462-4
Regular Article
Pressure, temperature and electric field effects on the photoionization cross section in a multilayered spherical quantum dot
1
Department of Physics, Solid Physics Laboratory, Faculty of Sciences Dhar El Mahraz, Sidi Mohamed Ben Abdellah University, B.P. 1796, Dhar El Mahraz, Fez, Morocco
2
Basic and Applied Scientific Research Center (BASRC), Imam Abdulrahman Bin Faisal University, P. O. Box 1982, 31441, Dammam, Saudi Arabia
3
Department of Physics, College of Sciences for Girls, Imam Abdulrahman Bin Faisal University, P. O. Box 1982, 31441, Dammam, Saudi Arabia
4
Faculty of Sciences and Technique, Sidi Mohamed Ben Abdellah University, B.P.2202, Route d’Imouzzer, Fez, Morocco
Received:
16
July
2022
Accepted:
4
November
2022
Published online:
15
November
2022
In this paper, within the effective mass approximation and by using the finite element method, we have studied the photoionization cross section (PCS) and the binding energy of a hydrogenic shallow donor impurity confined in multilayered spherical quantum dot under the effects of temperature, pressure and electric field. Furthermore, the dependence of the donor binding energy and photoionization cross section on the dielectric mismatch and the potential of the outer barrier have been investigated. Our numerical results reveal that the binding energy increases (decreases) with the pressure (temperature and electric field). Furthermore, it is found that as the pressure (temperature and electric field) increases, the position of the PCS peak shifts to the higher (lower) energies.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
