https://doi.org/10.1140/epjp/s13360-024-05637-7
Regular Article
Influence of structural factors and impurity position on second harmonic generation in double-quantum box GaAs-Ga1-xAlxAs structures
1
LPS Laboratory, Faculty of Science Dhar El Mahraz, Sidi Mohamed Ben Abdellah University, 1796, Fez, Morocco
2
SIGER Laboratory, Faculty of Sciences and Technology, Sidi Mohamed Ben Abdellah University, 2202, Fez, Morocco
3
Physics Department, Faculty of Science and Arts, King Khalid University, Muhayl Asser, Saudi Arabia
4
MPIS Group, ENSAM Laboratory, Hassan 2 University, 20670, Casablanca, Morocco
5
Laboratoire de La Matière Condensée et des Nanosciences (LMCN) Département de Physique, Faculté des Sciences de Monastir, 5019, Monastir, Tunisia
Received:
24
May
2024
Accepted:
9
September
2024
Published online:
19
September
2024
This study investigates the effects of structural factors on the properties of second harmonic generation (SHG) in double-quantum box structures (DQBs) made of GaAs-
, focusing on the role of a shallow donor impurity’s presence and location. Additionally, the nanostructure is subjected to a magnetic field (B). Using the finite element method, the Schrödinger equation was solved within the effective mass approximation. The simulation outcomes reveal how excitation direction, magnetic field strength, impurity position, box width, and barrier width influence SHG. Our primary finding indicates that increasing the magnetic field alters SHG characteristics, potentially eliminating consistent double peaks, particularly when polarization aligns along the impurity confinement axis. SHG resonance peaks shift with an increasing magnetic field (redshift) and increase in amplitude. Notably, the SHG peaks coincide when the impurity is symmetrically positioned at the center of the box, in both the left and right regions, regardless of the magnetic field’s presence. Furthermore, SHG disappears at smaller box widths, peaks at a 5 nm width, and increases steadily with greater barrier widths. These findings provide insights into manipulating SHG properties in double-quantum box structures, which could be valuable for optoelectronic device applications.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
