https://doi.org/10.1140/epjp/s13360-023-04630-w
Regular Article
Influence of structural variables and external perturbations on the nonlinear optical rectification, second, and third-harmonic generation in the InP/InGaAs triple quantum well structure
1
Department of Nanotechnology Engineering, Sivas Cumhuriyet University, Sivas, Turkey
2
Physics Department, Faculty of Applied Science, Umm AL-Qura University, Makkah, Saudi Arabia
3
Physics Department, Nanomaterials Technology Unit, Basic and Applied Scientific Research Center (BASRC), College of Science of Dammam, Imam Abdulrahman Bin Faisal University, Dammam, Saudi Arabia
4
Department of Physics, Sivas Cumhuriyet University, Sivas, Turkey
a
muhammedsayrac@cumhuriyet.edu.tr
Received:
5
August
2023
Accepted:
24
October
2023
Published online:
14
November
2023
The InP/InGaAs triple quantum well (TQW) structure is of significant interest to researchers studying new generations of semiconductor optoelectronic devices, as it offers valuable opportunities for controlling and enhancing the nonlinear optical processes in these devices. By applying external fields, such as hydrostatic pressure (P), temperature (T), and external electric field (F), the nonlinear optical properties of the InP/InGaAs TQW structure can be controlled and manipulated. This study investigates the effects of structure parameters of quantum well barriers and well widths (Lb and Lw) and the aforementioned external perturbations on the nonlinear optical properties, including the coefficients of nonlinear optical rectification (NOR), second-harmonic generation (SHG), and third-harmonic generation (THG) of the TQW structure. The energy eigenvalues and eigenfunctions of the confined single electron in TQW are obtained using the diagonalization method within the framework of the effective mass and parabolic band approximations. Moreover, employing the compact density matrix approximation for calculating the coefficients of the nonlinear optical response provides a computationally efficient way to assess the nonlinear optical properties of the TQW structure. The numerical results have significant potential to advance the understanding and design of semiconductor optoelectronic devices based on the InP/InGaAs triple quantum well structure. Exploring the effects of different parameters and external fields can lead to deeper insights into the underlying physics and may unlock new opportunities for developing innovative and high-performance devices.
Copyright comment Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
