Eur. Phys. J. Plus (2022) 137: 811
https://doi.org/10.1140/epjp/s13360-022-03034-6

Regular Article

Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon

¹ CERN European Organization for Nuclear Research, CH-1211, Geneva 23, Switzerland
² Laboratore de l’ Accelerateur Lineaire LAL, Universite Paris Sud Orsay, Orsay, Bures-sur-Yvette, France
³ INFN Sezione di Ferrara and departamento di Fisica e Scienze della Terra, Universita di Ferrara, Via Sarogat Blocco C, 44121, Ferrara, Italy
⁴ INFN, LNF, Via Fermi, 40 00044, Frascati, (Roma), Italy
⁵ INFN, Sezione di Roma Roma, Plazzale Aldo Moro 2, 00186, Rome, Italy
⁶ INFN, Sezione di Napoli, Napoli, Italy
⁷ NRC Kurchatov Institute - IHEP, 142281, Protvino, Russia
⁸ Joint Institute for Nuclear Research, Jolio-Curie 6, 141980, Dubna, Russia
⁹ Petersburg Nuclear Physics Institute in Nacional Research Centre “‘Kurchatov Institute”’, 141980, Petersburg, Russia
¹⁰ Imperial College, London, UK

^ag maisheev@ihep.ru

Received: 30 January 2022
Accepted: 2 July 2022
Published online: 14 July 2022

Abstract

We present the results of an experimental study of multiple scattering of positively charged high-energy particles in bent samples of monocrystalline silicon. This work confirms the recently discovered effect of a strong reduction in the rms multiple scattering angle of particles channeled in the silicon (111) plane. The effect is observed in the plane orthogonal to the bending plane. We show in detail the influence of angular constraints on the magnitude of the effect. Comparison of the multiple scattering process at different energies indicates a violation of the law of inverse proportionality of the rms angle of channeled particles with energy. By increasing the statistics, we have improved the results of multiple scattering measurements for particles moving, but not channeled, in silicon crystals.