https://doi.org/10.1140/epjp/s13360-024-05851-3
Regular Article
Multiple scattering of positively charged particles moving near the (111) plane in a silicon single crystal
1
CERN, the European Organization for Nuclear Research, CH-1211, Geneva 23, Switzerland
2
INFN Sezione di Ferrara e Departamento di Fisica e Scienze Della Terra, Universita di Ferrara, Blocco C, Via Saragat, 1, 44121, Ferrara, Italy
3
INFN, Sezione di Roma, Piazzale Aldo Moro 2, 00186, Rome, Italy
4
INFN, Sezione di Napoli, Naples, Italy
5
NRC Kurchatov Institute - IHEP, 142281, Protvino, Russia
6
Joint Institute for Nuclear Research, Joliot-Curie 6, 141980, Dubna, Russia
7
Petersburg B.P. Konstantinov Nuclear Physics Institute of NRC ‘‘Kurchatov Institute”, 188300, St. Petersburg, Russia
8
Imperial College, London, UK
Received:
25
July
2024
Accepted:
16
November
2024
Published online:
29
November
2024
The article is devoted to the study of the suppression of multiple scattering of positively charged particles with momenta of 180 GeV/c and 400 GeV/c passing through bent single crystals of silicon at small angles to the plane (111) both in channeling mode and in the above-barrier state. For the first time, the suppression of the effect of multiple scattering of non-channeling particles passing at a small angle to one of the planes of a silicon single crystal was observed. In addition, the asymmetry was observed in the multiple scattering of over-barrier particles with respect to their zero angle of entry into the single crystal.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
