Eur. Phys. J. Plus (2017) 132: 149
https://doi.org/10.1140/epjp/i2017-11433-9
https://doi.org/10.1140/epjp/i2017-11433-9
Erratum
Erratum to: Study of various technological parameters on the C-Vg and the G-Vg characteristics of MOS structures
1
Laboratory of Composite Ceramic and Polymer Materials (LaMaCoP), Sfax Faculty of Science, Soukra Road Km 4, 3038, Sfax, Tunisia
2
Grupo de Electronica y Semiconductores, Departamento de Fısica Aplicada, Universidad Autonoma de Madrid, 28049, Madrid, Spain
* e-mail: amorrejieba@gmail.com
Received:
23
February
2017
Accepted:
3
March
2017
Published online:
31
March
2017
This article has no abstract.
© Società Italiana di Fisica and Springer-Verlag Berlin Heidelberg, 2017
