Study of various technological parameters on the C-Vg and the G-Vg characteristics of MOS structures
Laboratory of Composite Ceramic and Polymer Materials (LaMaCoP), Sfax Faculty of Science, Soukra Road Km 4, 3038, Sfax, Tunisia
2 Grupo de Electronica y Semiconductores, Departamento de Fısica Aplicada, Universidad Autonoma de Madrid, 28049, Madrid, Spain
* e-mail: firstname.lastname@example.org
Accepted: 7 July 2016
Published online: 16 August 2016
This paper was devoted to study the effects of some technological parameters (gate, oxide and doping density N a on the electrical properties of MOS structures. The conductance and capacitance were determined from a proposed admittance model. Results showed a frequency dispersion of C-V g and G-V g curves in inversion regime. This modeling takes into account the influence of series and parallel resistances (R s, R p), thickness of oxide layer, the work function of gate electrode and the doping density (N a). The C-V g and G-V g characteristics have been simulated at high frequency (100 kHz-1 MHz).With increasing frequency, the inversion capacitance is decreased whereas the conductance is strongly increased. A degradation of their shapes is shown in the operating accumulation and depletion modes. The accumulation capacitance seems to be strong for titanium oxide (TiO2) and for the oxide thickness is very small. Interestingly, the change of metal gate causes C-V g shifting and variation of the values of the flat band and threshold voltages. In the inversion mode, the C - V g and G-V g decreases with the increase of the doping density (N a). There is a shift of the flat-band and threshold voltage (V fb,V th) when N a increase. Excellent agreement was observed between the calculated and the measured C-V g curves obtained at high frequency.
© Società Italiana di Fisica and Springer-Verlag Berlin Heidelberg, 2016