https://doi.org/10.1140/epjp/s13360-024-05477-5
Regular Article
Hysteresis impact of ferroelectric oxide on double-source vertical tunnel FET: DC and RF performance
Department of Engineering Sciences, Dariush Madadi is with the Faculty of Technology and Engineering, Semnan University, Semnan, Iran
Received:
22
June
2023
Accepted:
21
July
2024
Published online:
2
August
2024
This work presents a detailed TCAD investigation of the double-source vertical junction tunneling field-effect transistor (DSV-TFET) by ferroelectric gate oxide material (FE-DSV-TFET). We show that the ferroelectric oxide (Si: HfO2) improves the efficiency of the FE-DSV-TFET structure. The proposed device reduces the subthreshold swing from 13.2 to 6.2 mV/dec. Also, OFF-current decreases ~ 2.5 orders, and ON-current increases from 100 to 200 µA/µm in the FE-DSV-TFET. Besides, we investigate the hysteresis impact of coercive field (EC) and remnant polarization (Pr) compared to DSV-TFET.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
