Investigation of 4H-SiC gate-all-around cylindrical nanowire junctionless MOSFET including negative capacitance and quantum confinements
Faculty of Electrical and Computer Engineering, Semnan University, Semnan, Iran
Accepted: 22 July 2021
Published online: 29 July 2021
In our work, we demonstrate a 4H-SiC gate-all-around cylindrical nanowire junctionless (GAA-NWJL) metal oxide field effect transistor (MOSFET) with a negative capacitance (NC) in 20 nm gate length. This paper obtains a subthreshold swing (SS) lower than 60 mV/decade, which is the critical point in conventional MOSFETs. Also, a low drain-induced barrier lowering (DIBL) has been achieved at 21 mV/V. A high Ion/Ioff ratio ~ 4 × 1013 and shallow leakage current ~ 8 × 10–19 A are shown. We investigate the influence of the channel length, doping concentration, gate dielectric, and nanowire diameter on the device characteristics and short-channel effects of the GAA-NWJL. Besides, subthreshold slope, DIBL, leakage current, Ion/Ioff ratio, and band-to-band tunneling (BTBT) results have been analyzed. Lead zirconate titanate (PZT), as a ferroelectric material with negative capacitance (NC), is used at the top of the oxide region to obtain an ideal subthreshold swing at sub 60 mV/decade. Because of working in the sub-10 nm, quantum confinement impacts are considered. Furthermore, the 1D Landau–Khalatnikov (L–K) equations are considered in the structure simulations.
© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2021