https://doi.org/10.1140/epjp/s13360-024-04878-w
Regular Article
Effect of structural parameters and applied external fields on the third harmonic generation coefficient of AlGaAs/GaAs three-step quantum well
1
Department of Nanotechnology Engineering, Sivas Cumhuriyet University, 58140, Sivas, Turkey
2
Nanomaterials Technology Unit, Basic and Applied Scientific Research Center (BASRC), Physics Department, College of Science of Dammam, Imam Abdulrahman Bin Faisal University, P.O. Box 1982, 31441, Dammam, Saudi Arabia
3
Physics Department, College of Applied Science, Umm AL-Qura University, 24382, Makkah, Saudi Arabia
4
Laboratory Advanced Materials and Quantum Phenomena, Faculty of Sciences of Tunis, University Tunis El Manar, University Campus Farhat Hached Tunis, B.P. 94–ROMMANA, 1068, Tunis, Tunisia
5
Department of Physics, Faculty of Science, Sivas Cumhuriyet University, 58140, Sivas, Turkey
a
muhammedsayrac@cumhuriyet.edu.tr
Received:
18
October
2023
Accepted:
7
January
2024
Published online:
17
January
2024
This presented work includes the first in-depth theoretical investigation of the third harmonic generation (THG) coefficients of the AlGaAs/GaAs three-step quantum well. We explore how these optical properties evolve when influenced by tunable structural parameters and various external fields, including electric, magnetic, and non-resonant intense laser fields. Firstly, we obtained the subband energy eigenvalues and eigenfunctions of the structure using the diagonalization method within the framework of the effective mass and envelope function approach. Then, we calculated the THG coefficients of the structure using the compact density matrix approximation. The obtained numerical results demonstrate that, within a certain range of structural parameter adjustments and applied external field changes, significant shifts (red or blue) occur in the resonance peak of the THG coefficient. These changes elegantly reflect the practical implications of the presented study. Finally, we discuss the optimality of the structure for a certain amount of applied external fields, which can be crucial for pre-experimental studies applications and the design of optoelectronic devices.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
