https://doi.org/10.1140/epjp/s13360-023-04221-9
Regular Article
Time dependent laser irradiation induced structural, linear-nonlinear optical changes in Ag10Te10As20Se60 quaternary film for optoelectronic applications
1
Department of Engineering and Materials Physics, ICT-IOC, 751013, Bhubaneswar, India
2
Department of Physics, Indian Institute of Science, 560012, Bangalore, India
3
Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, 560064, Bengaluru, India
Received:
19
November
2022
Accepted:
22
June
2023
Published online:
22
July
2023
Chalcogenide materials are unique for their peculiar linear and nonlinear optical properties and are suitable for various optoelectronic applications. External inputs alter multiple parameters of the material. The influence of laser irradiation on chalcogenide thin films brings changes in its structural, morphological, linear, and nonlinear properties for different applications. In the current report, the quaternary Ag10Te10As20Se60 film was irradiated with 532 nm (2.33 eV) continuous laser for various durations. With the increase in the irradiation time, several changes in the material's structural and other optical properties were studied. The polycrystalline nature of the films remains the same upon irradiation, thus showing structural stability. The increase in laser irradiation exposure time also enhanced the heteropolar bonds in the film. The transparency of the material gradually increased with irradiation time and mostly showed in the infrared range (~ 1900 nm). This enables its application as window material in photodetectors and other infrared devices. The absorption edge of the material exhibits a blue shift, which also leads to an increase in the optical bandgap from 1.732 eV (unirradiated) to 2.010 eV (90 min irradiated). The photobleaching reduces refractive index, Urbach energy with the increase in nonlinear absorption coefficient. The χ(3) value reduced from 2.361 × 10–10 esu (unirradiated) to 0.177 × 10–10 esu for the 90 min irradiated film. Simultaneously, the optical electronegativity increased from 1.607 (unirradiated) to 1.729 for the 90 min irradiated film. The dielectric losses, carrier concentration, plasma frequency and nonlinear refractive index were also reduced with higher exposure time. The surface wettability of the films showed hydrophobicity properties and remains the same with laser irradiation. The changes in different parameters with laser irradiation make them good candidates for optoelectronic applications, particularly those exposed repeatedly to laser sources.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
