https://doi.org/10.1140/epjp/s13360-023-03756-1
Regular Article
Investigation of linear and third-order nonlinear optical properties of laser-dressed GaAs/GaAsSb/GaAs parabolic valence-band quantum wells
1
Department of Physics, Ahvaz Branch, Islamic Azad University, Ahvaz, Iran
2
Advanced Surface Engineering and Nano Materials Research Center, Department of Physics, Ahvaz Branch, Islamic Azad University, Ahvaz, Iran
3
Department of Science, Institute for Higher Education, ACECR, Ahvaz, Khouzestan, Iran
b azadeh.haghighatzadeh.physics@gmail.com, a.haghighatzadeh@iauahvaz.ac.ir
Received:
8
August
2022
Accepted:
30
January
2023
Published online:
9
February
2023
In this article, the linear and nonlinear intersubband optical properties of the valence-band electronic states were theoretically investigated in GaAs/GaAsSb/GaAs parabolic quantum well structures. The linear and the third-order nonlinear optical absorption coefficients and refractive index changes were examined as a function of the external electric field, half-width of the well, and the antimony content using density matrix formalism and the scheme of the iterative method in the framework of a two-level system. The numerical findings justified that the linear and the third-order nonlinear optical responses originated from the one-photon resonance processes. The resonance energy spectra indicated a redshift by increasing the dressing parameter of the laser field and a blueshift upon enhancing the electric field and the half-width of the well. The results revealed an enhancement in the amplitude of the optical characteristics with increasing the dressing parameter of the laser field, a decline in the electric field and an increment in the half-width of the well. Both linear and third-order nonlinear optical properties were maintained with variation of the antimony content.
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