https://doi.org/10.1140/epjp/s13360-022-03027-5
Regular Article
Optical method for calculating the dopant concentration of doped amorphous semiconductors
1
Research Center for New Energy Technology (RCNET), Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Jiading, 201800, Shanghai, People’s Republic of China
2
University of Chinese Academy of Sciences (UCAS), Shijingshan, 100049, Beijing, People’s Republic of China
3
School of Physical Science and Technology, ShanghaiTech University, 201210, Shanghai, People’s Republic of China
b
zlp_wan@mail.sim.ac.cn
k
z.x.liu@mail.sim.ac.cn
Received:
15
November
2021
Accepted:
30
June
2022
Published online:
26
July
2022
An optical method is proposed to calculate the dopant (e.g., boron or phosphorus) concentration in doped amorphous semiconductors. The basic principle of this method is that the effective density of valence electrons and the coordination number of the samples could be obtained by f-sum rule and dispersion energy model, respectively. A computational model is derived from this method and applied to doped amorphous silicon (a-Si:H) films with the results of spectroscopic ellipsometry and Fourier transform infrared spectroscopy measurements. It is found that the predicted concentrations of boron and phosphorus in doped a-Si:H samples are quite consistent with the actual results from secondary ion mass spectroscopy test, for the samples with the dopant content higher than 1021 cm−3.
Supplementary Information The online version contains supplementary material available at https://doi.org/10.1140/epjp/s13360-022-03027-5.
© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2022
