Modeling the ELDRS effects in hydrogen-rich a-SiO of a specific designed GLPNP bipolar transistor

Yang Liu; Guanghui Zhang; Hang Zhou; Xu Zuo; Yu Song; Ying Zhang

doi:10.1140/epjp/s13360-021-01601-x

2024 Impact factor 2.9

EPJ PLUS - Condensed Matter and Complex Systems

Eur. Phys. J. Plus (2021) 136: 613
https://doi.org/10.1140/epjp/s13360-021-01601-x

Regular Article

Modeling the ELDRS effects in hydrogen-rich a-SiO $_{2}$ of a specific designed GLPNP bipolar transistor

Yang Liu¹^,2, Guanghui Zhang¹^,2, Hang Zhou¹^,2, Xu Zuo³^,4^,5, Yu Song⁶ and Ying Zhang¹^,2^f

¹ Microsystem and Terahertz Research Center, China Academy of Engineering Physics, 610200, Chengdu, People’s Republic of China
² Institute of Electronic Engineering, China Academy of Engineering Physics, 621999, Mianyang, People’s Republic of China
³ College of Electronic Information and Optical Engineering, Nankai University, 300071, Tianjin, People’s Republic of China
⁴ Municipal Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, 300071, Tianjin, People’s Republic of China
⁵ Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, 300071, Tianjin, People’s Republic of China
⁶ Neijiang Normal University, 641100, Neijiang, People’s Republic of China

^f zhangying_mtrc@caep.cn

Received: 9 March 2021
Accepted: 22 May 2021
Published online: 1 June 2021

Abstract

Gamma irradiation experiments are made on a kind of gate lateral PNP transistors with dose rates from 10 rad/s to 0.167 mrad/s. We measured the concentrations of the oxide ( $N_{ot}$ $N_{ot}$ ) and interface defects ( $N_{it}$ $N_{it}$ ) during the irradiation but found that they showed inconsistent responses to the dose rate. In the range of 10 rad(SiO $_{2}$ $$_2$$ )/s-10 mrad(SiO $_{2}$ $$_2$$ )/s, $N_{ot}$ $N_{ot}$ do not show evident changes while $N_{it}$ $N_{it}$ increase stably with a factor of 2 for every order of magnitude of the decrease of the dose rate. In contrast, when the dose rate decreases below 10 mrad(SiO $_{2}$ $$_2$$ )/s, $N_{ot}$ $N_{ot}$ starts to decrease sharply but $N_{it}$ $N_{it}$ tends to saturate. The different dependence of $N_{ot}$ $N_{ot}$ and $N_{it}$ $N_{it}$ on dose rate implies that the formation of the two defects are dominated by independent mechanisms in the oxide of the transistors. With the help of the measurements of the defects and the numerical simulations, the key mechanisms for the enhanced low dose rate sensitivity effect of $N_{it}$ $N_{it}$ in this device is identified to be the competition between the hydrogenated defects decomposition and their recombination with electrons, a H $_{2}$ $$_2$$ prompt proton release model of these defects is also proposed. The simulated results shows a very good agreement with the experimental results.