Thermal conductivity dependent temperature during photo-thermo-elastic excitation of semiconductor material with volumetric absorption laser heat source in gravitational field
Department of Mathematics, Faculty of Science, Zagazig University, P.O. Box 44519, Zagazig, Egypt
2 Academy of Scientific Research and Technology (ASRT), P. O. Box 11516, 101 Qasr Al Aini St., Cairo, Egypt
Accepted: 16 February 2021
Published online: 4 March 2021
In this following work, a theoretical novel model for exited semiconducting medium is studied in the context of photothermal transport process. The dual-phase-lag (DPL) is used to modify the heat (energy) conduction equation when the thermal conductivity is variable during an initial hydrostatic stresses. The thermal conductivity depends on a temperature. The photo-thermoelasticity theory is introduced in a generalized form under the impact of gravitational field with a volumetric absorption laser which considered a heat source. The governing equations are studied in two-dimensional (2D) deformations and are solved using the harmonic wave technique. The considered physical quantities are obtained completely when are applied some thermal and mechanical loads at the free surface of silicon (Si) semiconductor elastic medium. The considered numerical physical fields are obtained graphically and discussed theoretically. The impacts of various variables are illustrated graphically which based on the thermal relaxation time (memories time, DPL theory). The comparisons are made under the effect of heat source, gravity and the variable thermal conductivity graphically.
© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2021