A DPL model of photo-thermal interaction in an infinite semiconductor material containing a spherical hole
Nonlinear Analysis and Applied Mathematics Research Group (NAAM), Department of Mathematics, King Abdulaziz University, Jeddah, Saudi Arabia
2 Department of Mathematics, Faculty of Science, Sohag University, Sohag, Egypt
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Accepted: 28 November 2017
Published online: 16 January 2018
The dual phase lag (DPL) heat transfer model is applied to study the photo-thermal interaction in an infinite semiconductor medium containing a spherical hole. The inner surface of the cavity was traction free and loaded thermally by pulse heat flux. By using the eigenvalue approach methodology and Laplace’s transform, the physical variable solutions are obtained analytically. The numerical computations for the silicon-like semiconductor material are obtained. The comparison among the theories, i.e., dual phase lag (DPL), Lord and Shulman’s (LS) and the classically coupled thermoelastic (CT) theory is presented graphically. The results further show that the analytical scheme can overcome mathematical problems by analyzing these problems.
© Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature, 2018