Transport properties at a sigmoidal graded heterojunction
Unité de Recherche de Matière Condensée, d’Électronique et de Traitement de Signal - (UR-MACETS), Department of Physics, Dschang School of Science and Technology, University of Dschang, P.O. Box, 67, Dschang, Cameroon
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Accepted: 13 December 2019
Published online: 23 January 2020
A sigmoidal grading profile is proposed for the efficient study of the influence of material parameters and effective mass mismatch on the properties of graded heterojunctions. For the interest of accessing bound and scattering states, we have shown the exact solvability of the model on the entire real line. Focussing on transport across a compositionally graded heterojunction, we have discussed the effect of interface width and effective mass mismatch on the transmission probability.
© Società Italiana di Fisica (SIF) and Springer-Verlag GmbH Germany, part of Springer Nature, 2020