Photo-thermoelastic interactions in a 2D semiconducting medium
Nonlinear Analysis and Applied Mathematics Research Group (NAAM), Department of Mathematics, King Abdulaziz University, Jeddah, Saudi Arabia
2 Department of mathematics, Faculty of Science, Sohag University, Sohag, Egypt
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Accepted: 1 October 2018
Published online: 11 December 2018
Photo-thermoelastic interactions in a two-dimensional semiconductor medium are studied by using mathematical methods in the context of coupled thermoelastic theory and plasma waves with one thermal relaxation time. The Laplace-Fourier transformations and eigenvalues approach are used to obtain the general solutions for any set of boundary conditions. The medium is initially assumed to be at rest and due to a moving thermal source with a constant speed, which are traction free. A semiconductor medium like silicon has been considered. In the conclusion, the outcomes are represented graphically to show the influences of heat source speed and the relaxation time. The eigenvalues approach gives the analytical solution without any assumed restriction on the actual physical quantities.
© Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature, 2018