https://doi.org/10.1140/epjp/s13360-025-06619-z
Regular Article
Gas sensor architecture leveraging hetero source stack with pocket-doped n-TFET for enhanced sensitivity
Department of Electronics and Communication Engineering, National Institute of Technology, 788010, Silchar, Assam, India
Received:
3
January
2025
Accepted:
4
July
2025
Published online:
22
July
2025
To facilitate the sensing mechanism of gaseous species, a sensing device leveraging a dual-gate heterostructure stacked source with pocket configuration tunnel field-effect transistor (DGHSSP-TFET) is introduced. This integration of pocket within the hetero stacked source significantly enhances device performance such as Vth, SS with concurrently achieving an elevated on current and a suppressed off-state current as this sourcestacked with pocket technique enhances tunneling tendency. Various gas species, such as methanol, ethanol, C2H4, and NO2, have been meticulously analyzed for their responsiveness and robustness across diverse thermal conditions (250–400 k). In the current study, various reactive metals are embedded in the gate terminal of the suggested structure to enable a range of gas detection functionalities. The sensitivity analysis of the suggested gas sensor demonstrates an impressive current sensitivity ratio of up to 1013, with an average Vth sensitivity reaching 0.34 V and a very steep SS sensitivity of 16 mV/dec. Due to its exceptional sensitivity and minimal energy consumption, the envisioned gas sensor exhibits significant potential for advanced applications.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2025
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
