https://doi.org/10.1140/epjp/s13360-025-06412-y
Regular Article
High-sensitivity near-infrared photosensor based on electron–hole bilayer TFET
1
School of Electronic and Information Engineering, Lanzhou Jiaotong University, 730070, Lanzhou, China
2
Key Laboratory of Sensor and Sensor Technology, Institute of Sensor Technology, Gansu Academy of Sciences, 730000, Lanzhou, China
a liuhu626@163.com, liuhu@mail.lzjtu.cn
Received:
3
March
2025
Accepted:
8
May
2025
Published online:
16
June
2025
In this paper, a novel photosensor for detecting near-infrared light is designed based on an electron–hole bilayer tunnel field-effect transistor, and its spectral performance is systematically studied through numerical simulation. The P+-pocket in its channel can strengthen the line tunneling to increase the on-state current and reduce the threshold voltage, aiming to reduce its spectral detection lower limit at low bias. The introduction of an InAlAs barrier layer can effectively suppress the off-state current, significantly expanding its dynamic detection range. By evaluating its spectral performance through metrics including signal-to-noise ratio (SNR), spectral sensitivity (Sn), quantum efficiency (η), and photoresponsivity (R), the device demonstrates an SNR of 117.3 dB, Sn of 7.3 × 105, η of 92.97%, and R of 719 mA/W under an optical signal at 960 nm. Studying the HfO2/InGaAs interface traps reveals that the Gaussian trap energy level located in the mid-gap can significantly degrade the optical performance, providing theoretical guidance for the manufacturing process.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2025
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
