https://doi.org/10.1140/epjp/s13360-025-06088-4
Letter to the Editor
Materiality of antimony doping in Ge–S amorphous chalcogenides in nonlinear switching
1
Department of Physics, Indian Institute of Information Technology Bhopal, 462003, Bhopal, India
2
Department of Physics, School of Basic Sciences, U.I.E.T., C.S.J.M. University, 208024, Kanpur, India
3
Department of Physics, Christ Church College, 208001, Kanpur, India
4
Materials Science Programme, Indian Institute of Technology, 208016, Kanpur, India
a
anjanikumar@iiitbhopal.ac.in
Received:
8
April
2024
Accepted:
4
February
2025
Published online:
21
February
2025
Optical transmissions are involved in the Ge25S75−xSbx (x = 0, 10) chalcogenides thin films within the range of wavelength 300 to 3100 nm. Swanepoel’s approach is used for evaluation of linear optical parameters (n, k, x, εʹ and εʺ) on the basis of transmission measurements. Optical band gap (2.49 and 1.89 eV) and dispersion analysis are done by using Tauc’s and WDD relations, respectively. In search of the possibility of nonlinear switching in Ge25S75−xSbx (x = 0, 10) chalcogenides, nonlinear index of refractions (1.456 × 10−12 esu and 2.153 × 10−12 esu) and nonlinear susceptibility (4.55 × 10−13 and 7.01 × 10−13) are also evaluated. Based on result out comes on the basis of figure of merit, the applicability for photonics is discussed.
© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2025
