https://doi.org/10.1140/epjp/s13360-025-05990-1
Regular Article
Characterization of the triphenylmethane dye (Patent Blue V)-modified Al/p-Si diode
1
Department of Computer Engineering, Faculty of Engineering, Batman University, 72060, Batman, Turkey
2
Department of Chemistry, Faculty of Sciences and Arts, Batman University, 72060, Batman, Turkey
3
Department of Physics, Faculty of Sciences and Arts, Batman University, 72060, Batman, Turkey
Received:
28
February
2024
Accepted:
6
January
2025
Published online:
25
January
2025
The sol-gel spin coating method, an easily applicable, low-temperature, and inexpensive method, was used to grow Patent Blue V (PBV) organic thin films placed between metal and semiconductor. Atomic force microscope images were taken to reveal the morphological structure of the resulting organic film. FTIR, NMR, and UV-Vis measurements were taken to investigate the chemical features and optical structure of the PBV molecule. Using the traditional I-V, Cheung, and Norde methods of the produced Al/PBV/p-Si diode structure, ideality factor (n), barrier height (Φb), series resistance (Rs), and interfacial density of states (Nss) parameters were calculated. The differences between the results obtained with these methods arise from calculating the I-V characteristic of the methods from different regions. The ideality value of n for the produced diodes is much greater than one (n > > 1). Deviating the calculated n value from 1 indicates possible mechanisms, such as generation-recombination effect, organic PBV layer, and interfacial states. It was observed that the electronic parameters of the Al/p-Si conventional junction can be controlled using an organic PBV interlayer.
© The Author(s) 2025
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