https://doi.org/10.1140/epjp/s13360-024-05531-2
Regular Article
Experimental analysis and ANFIS modeling of optical properties and band gap engineering in Se–Te–Ge film composition and insights into its photonic applications
Physics Department, Faculty of Education, Ain Shams University, 11757, Roxy, Cairo, Egypt
Received:
9
December
2023
Accepted:
3
August
2024
Published online:
21
August
2024
The current research presents an experimental and theoretical approach for the optical behavior of Se–Ge–Te material using the adaptive neuro-fuzzy inference system ANFIS model. The optical properties and band gap of Se–Ge–Te material are important in the design and development of optical devices such as waveguides and sensors. This study analyzed the spectral distribution of transmittance and reflectance in the visible and near-infrared range for Se70Te20Ge10 chalcogenide films. The findings revealed consistent patterns in the maximum and minimum values across both reflectance and transmittance spectra. The researchers identified three distinct regions: strong absorption below 760 nm, intermediate absorption between 760 and 980 nm, and transparency at higher wavelengths (> 980 nm). The optical energy gap and Urbach energy were determined using the Tauc model. The refractive index and extinction coefficient were calculated and found to be constant at higher wavelengths. Additionally, the analysis of complex optical constants and electrical loss coefficients demonstrated an increase in photon energy. ANFIS model was trained using the experimental data as inputs, and its accuracy was evaluated using a set of methods. The ANFIS-optimized networks were obtained by retraining the experimental data to produce minimum errors. The results showed that the ANFIS model was capable of accurately predicting the refractive index, extinction coefficient, optical energy gap, and dielectric constants at wavelengths that are not incorporated in the measured range with mean absolute errors (MAE) not exceeding 10−5. By generalization, the proposed approach can be used to predict the optical and dielectric behaviors of other similar materials and can be applied in the design and optimization of optical devices.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
