https://doi.org/10.1140/epjp/s13360-024-05156-5
Regular Article
Third harmonic generation of a 12–6 GaAs/Ga
Al
As double quantum well: effect of external fields
1
Unidad Académica de Ciencias Químicas, Universidad Autónoma de Zacatecas, Carretera Zacatecas-Guadalajara Km. 6, Ejido la Escondida, 98160, Zacatecas, Zacatecas, México
2
Laboratorio de Ciencias Forenses, Unidad Académica de Derecho, Universidad Autónoma de Zacatecas, Ramón López Velarde 117, Lomas del Patrocinio, 98068, Zacatecas, Zacatecas, México
3
Aselsan Sivas Precision Optics, Sivas, Turkey
4
Department of Physics, Faculty of Science, Sivas Cumhuriyet University, 58140, Sivas, Turkey
5
Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad esquina con Paseo La Bufa S/N, 98060, Zacatecas, Zacatecas, México
Received:
31
January
2024
Accepted:
3
April
2024
Published online:
27
April
2024
In this paper, we report the third harmonic generation in a 12–6 potential profile-shaped GaAs/GaAlAs double quantum well. We investigate the effects of the well width size and the presence of the external fields: electric, magnetic, and intense laser. The electronic structure is calculated within the effective mass approximation using a diagonalization method to solve the Schrödinger equation. The expression for third harmonic generation comes from the compact density matrix method. Our results show that the intense laser field effect strongly affects the optoelectronic properties; the electric field (well width) redshifts (blueshifts) the third harmonic generation peaks. Additionally, we observe that the magnetic field has a negligible impact on the studied properties for this potential profile. It is important to stress that the optical signal is in the THz range and that these results can be considered to design possible systems for THz radiation in optoelectronic devices.
M. Demir, F. Ungan, F. M. Nava-Maldonado and J. C. Martínez-Orozco contributed equally to this work.
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