https://doi.org/10.1140/epjp/s13360-023-04660-4
Regular Article
Photoexcited carriers transfer properties in a doped double quantum dots photocell
1
Center for Quantum Materials and Computational Condensed Matter Physics, Faculty of Science, Kunming University of Science and Technology, 650500, Kunming, People’s Republic of China
2
Department of Physics, Faculty of Science, Kunming University of Science and Technology, 650500, Kunming, People’s Republic of China
Received:
30
May
2023
Accepted:
3
November
2023
Published online:
29
November
2023
Identifying the behavior of photoexcited carriers is one method for empirically boosting their transfer efficiencies in doped double quantum dots (DQDs) photocells. The photoexcited carriers transfer qualities were assessed in this study by the output current, power, and output efficiency in the multi-photon absorption process for a doped DQDs photocell, and an optimization technique is theoretically obtained for this proposed photocell model. The results show that some structure parameters caused by doping, such as gaps, incoherent tunneling coupling, and symmetry of structure between two vertically aligned QDs, can remarkably control the photoexcited carriers transfer properties, and that slightly increasing the ambient temperature around room temperature is beneficial to the transfer performance in this doping DQDs photocell model. Thus, our scheme proves a way to optimized strategies for DQDs photocell.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
