https://doi.org/10.1140/epjp/s13360-023-04621-x
Regular Article
A new low gain avalanche diode concept: the double-LGAD
1
CERN, Geneva, Switzerland
2
Dipartimento Fisica e Astronomia, Università di Bologna, Bologna, Italy
3
INFN, Torino, Italy
4
Università del Piemonte Orientale, Novara, Italy
5
INFN, Bologna, Italy
6
Università degli Studi di Torino, Torino, Italy
7
Dipartimento di elettronica e telecomunicazioni, Politecnico di Torino, Torino, Italy
a
francesca.carnesecchi@cern.ch
b
sofia.strazzi2@unibo.it
Received:
29
July
2023
Accepted:
22
October
2023
Published online:
7
November
2023
This paper describes the new concept of the double LGAD (low-gain avalanche diodes). The goal was to increase the charge at the input of the electronics, keeping a time resolution equal to or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 µm, 35 µm and 50 µm.
© The Author(s) 2023
Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
