https://doi.org/10.1140/epjp/s13360-023-04522-z
Regular Article
Layer dependency of in-plane thermal conductivity in graphene/hBN van der Waals heterostructures: a molecular dynamics study
School of Microelectronics, Shanghai University, Shanghai, China
Received:
29
July
2023
Accepted:
25
September
2023
Published online:
9
October
2023
Due to their excellent in-plane thermal transport properties, graphene (G), hexagonal boron nitride (hBN), and their heterostructures have broad application prospects in the field of thermal management. The in-plane thermal conductivity (TC) of G/hBN van der Waals (vdW) heterostructures by nonequilibrium molecular dynamics (NEMD) method were investigated in this study. The results show that the TC of G/hBN vdW heterostructures is up to ~ 384 Wm−1 K−1 at 300 K, an increase of ~ 16% compared to that of monolayer hBN. The TC of multilayer hBN is increased by up to ~ 60% with the addition of 6 layers of graphene. The effect of interlayer coupling strength on the TC of G/hBN vdW heterostructures is related to the number of layers and vertical thermal transport. The TC of the G/hBN vdW heterostructures is decreased by ~ 30–36% from 300 to 500 K. This work provides valuable references for the application of graphene and hBN in electronic devices to solve thermal management problems.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.