https://doi.org/10.1140/epjp/s13360-023-03965-8
Regular Article
Calculation the difference created in Monte Carlo simulation results due to the use of the average energy of a beta source instead of its continuous beta spectrum
Faculty of Physics and Nuclear Engineering, Shahrood University of Technology, 3619995161, Shahrood, Iran
b tavakoli.anbaran@gmail.com, Tavakoli-Anbaran@shahroodut.ac.ir
Received:
7
March
2023
Accepted:
10
April
2023
Published online:
28
May
2023
Using the average energy of the beta sources instead of their continuous beta spectrum can affect the accuracy of the simulation results. But in the present work, more than 30 references are mentioned in which the average energy or the maximum energy of the beta source is used instead of its continuous beta spectrum. Therefore, we calculated the amount of difference created in Monte Carlo simulation results when the average energy of the beta source is used instead of its continuous beta spectrum. In this regard, the continuous beta spectrum of some widely used sources such as 63Ni, 90Sr, 35S, 14C and 147Pm were calculated using the Golden Fermi law and computer code in Fortran language. Then, the amount of energy deposition in the soft tissue (nuclear medicine) and semiconductor (nuclear battery) were calculated by MCNP code in two state. The first state is to use the average energy of the beta source in the simulations and the second state is to use the continuous beta spectrum of the beta source in the simulations. Then the difference between the two state was calculated. Studies show that using the average energy of the 63Ni, 90Sr, 35S, 14C and 147Pm beta sources instead of their continuous beta spectrum causes 63.28%, 27.20%, 54.91%, 53.28% and 54.35% difference in the amount of energy deposition in the soft tissue, respectively. Also, using the average energy of the 63Ni, 90Sr, 35S, 14C and 147Pm beta sources instead of their continuous beta spectrum causes 63.16%, 26.77%, 55.53%, 53.87% and 54.37% difference in the amount of energy deposition in the semiconductor (Si), respectively.
Copyright comment Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
