https://doi.org/10.1140/epjp/s13360-023-03932-3
Regular Article
Laser ablation fabrication of Zn1-xNixO/ZnO heterostructure and valence band offset measurements
PMSE Department, Jaypee Institute of Information Technology, 201307, Sector 62, Noida, Uttar Pradesh, India
Received:
5
November
2022
Accepted:
27
March
2023
Published online:
11
April
2023
ZnNiO and ZnO hetero-interfaces grown by pulsed laser deposition technique have been studied by grazing angle XRD (Gi-XRD), UV–visible spectroscopy, X-ray photoelectron spectroscopy, and valence band spectroscopy. Type-II band alignment (staggered gap) has been observed at ZnNiO and ZnO hetero-interface with conduction band and valence band offset values of − 0.06 eV and 0.15 eV, respectively, for Ni-2p state − 0.22 eV and 0.31 eV, respectively, for Zn-2p state for 3% of Ni doping. For 7% of Ni doping, conduction and valence band offsets of − 0.17 eV and 0.31 eV, respectively, have been obtained for Ni-2p state, − 0.29 eV and 0.43 eV, respectively, for Zn-2p state. The precise calculation of band offsets in ZnNiO and ZnO interface for both Ni-2p and Zn-2p core energy levels will be very helpful in designing and fabricating optoelectronic devices like LEDs, photodetectors.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
