https://doi.org/10.1140/epjp/s13360-022-03636-0
Regular Article
Structurally controllable temporal electron-spin splitter based on parallel magnetic-electric-barrier nanostructure
College of Science, Guilin University of Technology, 541004, Guilin, China
Received:
24
July
2022
Accepted:
27
December
2022
Published online:
1
February
2023
Based on a parallel magnetoelectric nanostructure (MEMN) achieved by constructing a ferromagnetic stripe and a Schottky-metal stripe in a parallel configuration on the surface of an InAs/AlxIn1−xAs heterostructure, a temporal electron-spin splitter (TESS) was recently proposed. To control this spintronic device, δ-doping is introduced by atomic-layer doping technology. The dwell time of electrons in the parallel MEMN still depends on electron spins, even if δ-doping is included in the device. Both the magnitude and sign of electron-spin polarization in dwell time can be tuned by changing the δ-doping. A structurally controllable TESS can be obtained for spintronic device applications.
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