Structurally controllable temporal electron-spin splitter based on parallel magnetic-electric-barrier nanostructure
College of Science, Guilin University of Technology, 541004, Guilin, China
Accepted: 27 December 2022
Published online: 1 February 2023
Based on a parallel magnetoelectric nanostructure (MEMN) achieved by constructing a ferromagnetic stripe and a Schottky-metal stripe in a parallel configuration on the surface of an InAs/AlxIn1−xAs heterostructure, a temporal electron-spin splitter (TESS) was recently proposed. To control this spintronic device, δ-doping is introduced by atomic-layer doping technology. The dwell time of electrons in the parallel MEMN still depends on electron spins, even if δ-doping is included in the device. Both the magnitude and sign of electron-spin polarization in dwell time can be tuned by changing the δ-doping. A structurally controllable TESS can be obtained for spintronic device applications.
© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.