Microstructural, optical, and electrical properties of Eu, Tb co-doped ZnO micropods elaborated by chemical bath deposition on a p-Si substrate
Department of Physics, College of Science, Imam Abdulrahman Bin Faisal University, P.O. Box 1982, 31441, Dammam, Saudi Arabia
2 Basic & Applied Scientific Research Center, Imam Abdulrahman Bin Faisal University, P.O. Box 1982, 31441, Dammam, Saudi Arabia
3 Department of Biology, College of Education, Majmaah University, P.O. Box 66, Al, 11952, Majmaah, Saudi Arabia
4 Department of Basic Engineering Sciences, College of Engineering, Imam Abdulrahman Bin Faisal University, P.O. Box 1982, 31441, Dammam, Saudi Arabia
5 Department of Physics, King Fahd University of Petroleum & Minerals, 31261, Dhahran, Saudi Arabia
6 Interdisciplinary Research Center for Advanced Materials, King Fahd University of Petroleum & Minerals, 31261, Dhahran, Saudi Arabia
7 Groupe d’Etude de La Matière Condensée (GEMAC), CNRS, Université de Versailles-St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78035, Versailles, France
8 Department of Physics, College of Science, Majmaah University, 11932, Al Zulfi, Saudi Arabia
Accepted: 16 September 2022
Published online: 29 September 2022
Eu, Tb co-doped ZnO was elaborated by chemical bath deposition on p-type (100) Si and annealed at different temperatures. Micropod morphology was observed using SEM. All samples exhibited a wurtzite structures. The EDX concentrations of Eu and Tb did not exceed 2.1% and 1.3%, respectively. The mixed valence states of Eu and Tb in the ZnO micropods were demonstrated using XPS analysis. Microstructural analysis of the co-doped sample showed variations as a function of the Eu and Tb concentration ratios. The modification of the Pl intensity and center of gravity of the visible band emission is due to the perturbation of native defects that interact with RE ions. The emission of Eu 5D0 → 7F2 (615 nm) and Tb 5D4 → 7F3 (620 nm) in the red-orange region of visible light was obtained at an excitation wavelength of 405 nm. The competition between the effect of annealing temperature and that of the two dopant concentrations is believed to be an effective strategy for changing the color emission of Eu, Tb co-doped ZnO. The CIE color emission of the co-doped sample annealed at 500 °C and XEu = 1.19%, XTb = 0.92% annealed at 700 °C lies in the white-light region reported in the literature for designing WLED. The Eu, Tb co-doped ZnO/p-Si heterojunction showed good rectifying I–V characteristics, and the electrical parameters were similar to those obtained for each dopant. A significant decrease in series resistance was allowed to the growth of a ZnO seed layer before the formation of ZnO micropods.
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