https://doi.org/10.1140/epjp/s13360-022-03291-5
Regular Article
Investigation of the fundamental working mechanism for high-performance Sb2(S1−xSex)3 solar cells
1
School of Physics and Electronic Engineering, Nanyang Normal University, 473061, Nanyang, China
2
Key Laboratory of Material Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 450052, Zhengzhou, China
Received:
16
July
2022
Accepted:
16
September
2022
Published online:
27
September
2022
Antimony chalcogenide (Sb2(S1−xSex)3) has emerged as a potential candidate for solar cell fabrication due to the excellent photoelectric characteristics and the sample preparation process. However, the power conversion efficiencies (PCEs) remain far away from the theoretical limit of Shockley–Queisser (S–Q), indicating that the fundamental mechanisms behind low performance are still unclear. In this paper, a theoretical study is presented first to evaluate the influence of Se composition, thickness, doping density, bulk, and interface defect densities on device parameters. It is demonstrated that PCEs over 17% could be only obtained for the devices with good absorber quality, improved interface contact characteristics, and within Se composition range of 0.6–0.9. Then, the bandgap grading configuration is evaluated, and PCEs above 13.5% are obtained for the devices with poor absorber quality and high grading structures. Finally, CsPb(I1−xBrx)3 is introduced as hole transport layers and the improvement in PCE is realized. These results will provide useful guidance for the design of high-efficiency devices.
Supplementary Information The online version contains supplementary material available at https://doi.org/10.1140/epjp/s13360-022-03291-5.
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