https://doi.org/10.1140/epjp/s13360-022-03264-8
Regular Article
Suppression of injected minority carriers in nanoscale field effect diodes to improve the off-current
Department of Electrical and Computer Engineering, Semnan University, 3513119111, Semnan, CO, Iran
Received:
11
May
2022
Accepted:
4
September
2022
Published online:
15
September
2022
One of the fundamental problems of field-effect diodes (FED) in nanometer scale is the OFF-current increment due to the injection of additional minority carriers from the source and drain areas into the channel. In this paper, a new structure has been proposed to solve the problem of additional carriers. The presented device consists of two layers with a wide-bandgap material in the boundary regions between the channel and the source/drain areas in the depth of the channel. The idea is to create a potential barrier against additional carriers in the OFF-state to improve electrical characteristics. Furthermore, the proposed structure do not need the reservoir’s regions and therefore the volume of the source and drain regions has been increased compared to side contacted FED (S-FED) and double gate FED (DG-FED) structures and resulted in the ON-current improvement. The comparison of the proposed and conventional structures results shows that the proposed structure has improved the ION/IOFF ratio, gate delays, and energy-delay-production (EDP). So the proposed structure could be an appropriate replacement for the conventional structures.
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