https://doi.org/10.1140/epjp/s13360-022-03259-5
Regular Article
Dynamics of the photoluminescence spectrum and the types and parameters of excitons in a SiNx/SiO2 superlattice
1
Institute of Automation and Control Processes of FEB RAS, 5, Radio St., 690041, Vladivostok, Russia
2
Rzhanov Institute of Semiconductor Physics of SB RAS, 13 Lavrentiev Avenue, 630090, Novosibirsk, Russia
Received:
20
April
2022
Accepted:
2
September
2022
Published online:
21
September
2022
This paper presents the results of experimental studies and analysis of the dynamics (changes in characteristics) of the photoluminescence (PL) spectrum of a SiNx/SiO2 dielectric heterostructure with a change in the energy of exciting photons in the range of comparable and smaller values of the band gap of SiNx and SiO2 layers. The experimental dependences of the peak energy of the PL spectra, the PL intensity of the corresponding peak energy, and the Stokes shift on the excitation photon energy are found. The existence of two regions of excitation photon energies, in which these dependences have a fundamentally different character: monotonic (linear or exponential) or nonmonotonic, is found. We have concluded that small-radius excitons and hot electron–hole pairs are mainly PL emitting centers. They are localized in the interface layer, and their radii do not exceed the size of the crystalline cells of silicon dioxide and silicon nitride. The dynamics of the PL spectrum is due to the evolution of their state during multiphonon interaction with crystal lattice nodes. The conclusions obtained are of a general nature for dielectric heterogeneous layered nanostructures. The exciton masses and binding energies, which determine the PL and its dynamics, were calculated specifically for the superlattice under study.
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