https://doi.org/10.1140/epjp/s13360-022-03220-6
Regular Article
Theoretical study on transport properties of group-III doped SiCNRs
1
Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, 066004, Qinhuangdao, China
2
School of Mechanical Engineering, Yanshan University, 066004, Qinhuangdao, China
3
LiRen College, Yanshan University, 066004, Qinhuangdao, China
Received:
11
April
2022
Accepted:
22
August
2022
Published online:
2
September
2022
Silicon carbide nanoribbons (SiCNRs) have a broad application in the field of new-generation micro-nanoelectronic devices. In this paper, first-principles data are used to simulate the effect of the substitution of Si or C sites by group-III elements on the transport properties of zigzag SiCNRs (ZSiCNRs). The results show that the conductivity and carrier concentration of group-III doped ZSiCNRs increase with the increase in temperature, while the change of mobility with temperature is opposite. At room temperature, the conductivity of ZSiCNRs changed little when the Si site was replaced, while the conductivity changed greatly when the C site was replaced. Further studies show that the carrier concentration of group-III doped ZSiCNRs mainly depends on the shallow impurity level. The mobility is mainly determined by optical phonon scattering and decreases with increasing temperature.
Supplementary Information The online version contains supplementary material available at https://doi.org/10.1140/epjp/s13360-022-03220-6.
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