https://doi.org/10.1140/epjp/s13360-022-03007-9
Regular Article
Performance enhancement of ultraviolet-C AlGaN laser diode
Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, 23460, Topi, Khyber Pakhtunkhwa, Pakistan
Received:
26
November
2021
Accepted:
26
June
2022
Published online:
5
July
2022
The internal quantum efficiency (IQE) of deep ultraviolet (DUV) AlGaN-based laser diode (LD) emitting, in the wavelength region between 260 and 279 nm, is improved by proposing a quaternary-layer AlGaInN between the p-doped electron blocking layer (EBL) and the p-doped waveguide. This leads to an increase in the carrier concentration in the active region of the proposed LD. The radiative recombination rate is improved by 74% in the proposed LD. The current density is reduced from 21 kA/cm2 (reference LD) to 6.13 kA/cm2 (proposed LD). The proposed LD has a 71% higher internal quantum efficiency than the reference LD. Using SiLENSe™ 6.3, we analyzed both structures numerically.
© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2022
