https://doi.org/10.1140/epjp/s13360-022-02894-2
Regular Article
Band alignment determination in few-layer exfoliated MoSe2/SiO2 interface using Synchrotron-based photoemission spectroscopy
1
Centre for Nanoscience and Nanotechnology, Block-II, South Campus, Panjab University, Sector-25, 160014, Chandigarh, India
2
Beamline Development and Application Section, Bhabha Atomic Research Centre, 400085, Trombay, Mumbai, India
a rahulguleria863@gmail.com, rahul.cnsnt@pu.ac.in
b
aroras@pu.ac.in
Received:
3
March
2022
Accepted:
30
May
2022
Published online:
6
June
2022
The ultrathin 2D-layered transition-metal dichalcogenides (TMDs) derived using solution-phase processes have engrossed great attention as an pivitol class of materials for optoelectronics and energy harvesting applications. In this work, we investigated the band alignment in the MoSe2/SiO2 heterointerface synthesized by employing simple, low cost and facile liquid exfoliation method. The high intense crystalline peak of the (002) plane and presence of Raman phononic mode (A1g and E12g modes) pointed toward the formation few monolayer thick MoSe2 nanosheets upon liquid exfoliation. Corroboratively, the electronic structure was verified by XPS (X-ray photoelectron spectroscopy) and VBPES (valence band photoemission spectroscopy). Such that, utilizing both, we have determined a valence and conduction band offset of 4.06 ± 0.10 eV and 2.60 ± 0.10 eV at MoSe2/SiO2 heterointerface with a type-I band alignment.
Supplementary Information The online version contains supplementary material available at https://doi.org/10.1140/epjp/s13360-022-02894-2.
© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2022
