Eur. Phys. J. Plus (2022) 137: 517
https://doi.org/10.1140/epjp/s13360-022-02745-0

Regular Article

Hot carrier reliability assessment of vacuum gate dielectric trench MOSFET (TG-VacuFET)

¹ Applied Science and Humanity Department, ADGITM, New Delhi, India
² Electronics & Communication Engineering Department, Jaypee Institute of Information Technology, Noida, India
³ Electronics & Communication Engineering Department, Symbiosis Institute of Technology, Pune, India

^b ajay.kumar@jiit.ac.in
^c adi.28.jain@gmail.com

Received: 29 November 2021
Accepted: 14 April 2022
Published online: 28 April 2022

Abstract

The manuscript proposes a Vacuum Gate Dielectric Trench MOSFET (TG-VacuFET) to attribute the reliability performances in hot-carrier and radiation damage at room temperature (300 K). The improved reliability performances of TG-VacuFET are simultaneously compared with silicon dioxide (SiO₂) gate dielectric-based Conventional Trench MOSFET (CT-MOSFET). The vacuum gate technique onto the trench MOSFET exhibits a high switching ratio (10¹⁰) with a low subthreshold swing (≈65 mV/decade). Also, electron temperature and electric field are lower at the drain end, which signifies the immunity against hot carriers as compared to CT-MOSFET. Further, γ-rays (with 10Mrad dose) are used to show the proposed device's reliability under high-energy radiation. Results depict that TG-VacuFET is much more immune to radiation damage and offers superior performance under irradiation than CT-MOSFET. Thus, the reliability performances of TG-VacuFET under hot-carrier and radiation damage pave the way for circuit implementation in space applications.