https://doi.org/10.1140/epjp/s13360-022-02491-3
Regular Article
Effect of position-dependent effective mass on donor impurity- and exciton-related electronic and optical properties of 2D Gaussian quantum dots
1
Faculty of Education, Department of Mathematics and Natural Science Education, Sivas Cumhuriyet University, 58140, Sivas, Turkey
2
Faculty of Science, Department of Physics, Sivas Cumhuriyet University, 58140, Sivas, Turkey
3
Faculty of Science, Physics Department (Retired), Dokuz Eylul University, 35390, İzmir, Turkey
4
Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia
Received:
1
December
2021
Accepted:
15
February
2022
Published online:
14
March
2022
Using the compact density matrix scheme and the effective mass approximation, we study the influence of position-dependent electron and heavy-hole mass distributions on the impurity-related electronic properties, excitonic binding, and intersubband electron transitions in a two-dimensional quantum dot with Gaussian potential. The electronic structure has been obtained by using the two-dimensional diagonalization method. The obtained results show the significant influence of the functional form of the spatial mass distribution and structural geometry on the accurate determination of the impurity-related electronic structure, optical response, electron–hole overlap, and, therefore, the carrier lifetimes in the optoelectronic devices based on quantum dots.
© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2022
