Eur. Phys. J. Plus (2022) 137: 34
https://doi.org/10.1140/epjp/s13360-021-02268-0

Regular Article

MBN explorer atomistic simulations of 855 MeV electron propagation and radiation emission in oriented silicon bent crystal: theory versus experiment

¹ Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Street, 11, 220006, Minsk, Belarus
² INFN Sezione di Ferrara, Via Saragat 1, 44122, Ferrara, Italy
³ Università degli Studi di Milano, Via Festa del Perdono, 7, 20122, Milano, Italy
⁴ Dipartimento di Fisica e Scienze della Terra, Università di Ferrara, Via Saragat 1, 44100, Ferrara, Italy
⁵ MBN Research Center, Altenhöferallee 3, 60438, Frankfurt am Main, Germany
⁶ A.F. Ioffe Physical-Technical Institute of the Russian Academy of Sciences, Polytechnicheskaya Str. 26, 194021, St Petersburg, Russia

^a bycel@tut.by

Received: 11 May 2021
Accepted: 6 December 2021
Published online: 17 December 2021

Abstract

The method of relativistic molecular dynamics is applied for accurate computational modeling and numerical analysis of the channelling phenomena for 855 MeV electrons in bent oriented silicon (111) crystal. Special attention is devoted to the transition from the axial channelling regime to the planar one in the course of the crystal rotation with respect to the incident beam. Distribution in the deflection angle of electrons and spectral distribution of the radiation emitted are analyzed in detail. The results of calculations are compared with the experimental data collected at the MAinzer MIctrotron facility.