Polarization effect on thermal boundary resistance of GaN/InGaN superlattices with low In contents
Department of Physics, N.I.T Raipur, 492010, Raipur, India
Accepted: 29 October 2021
Published online: 19 November 2021
The influence of interfacial polarization mechanism on thermal boundary resistance (TBR) of GaN/InGaN superlattices (SLs) was investigated theoretically. The TBR values are obtained from temperature distribution in the active region of GaN/InGaN optoelectronic device by comparing experimental results with thermal simulations including the polarization electric field induced from strain of the SL. While the calculated TBR was found 9.3 × 10−9 W−1m2K for devices at room temperature, this plays a prominent role in the management of the device’s thermal conductivity. The determined effective TBR was found to decrease with temperature at the GaN/InGaN interface, while TBR was found to be enhanced by the polarization mechanism developed in the GaN/InGaN SL interface. The contribution of very low thermal conductivity in the active region of the SL for efficient thermoelectric efficiency necessitates comparatively large value of TBR, and its temperature dependences are also discussed.
© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2021