https://doi.org/10.1140/epjp/s13360-021-01661-z
Regular Article
Shifted gate electrode of silicon on insulator metal semiconductor FETs to amend the breakdown and transconductance
Electrical Engineering Department, Energy faculty, Kermanshah University of Technology, Kermanshah city, Iran
Received:
13
January
2021
Accepted:
9
June
2021
Published online:
17
June
2021
Improving the DC and RF characteristics of field-effect devices by simple changes in basic structure is an advantageous electronics research topic which has been more considered in recent years. Mixture of SOI and MES technology with FETs results in SOI-MESFETs with proper electrical characteristics. Here, by changes in basic form of these devices, an efficient structure is introduced which shows enhanced DC and RF specifications. A shift in gate metal from middle of device toward the source region and using a nickel layer inside the drift region are the changes compared to the basic device which are applied to manage the electric field and parasitic capacitances. The resultant device is evaluated in terms of maximum output power density, cutoff frequency, breakdown voltage, maximum oscillation frequency, and stable gains. Simulations show that the proposed device outperforms the conventional structure for evaluated criteria.
© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2021
