Enhanced magnetoresistance in hydrogen- and fluorine-passivated zigzag aluminium nitride nano-ribbon
NIT Kurukshetra, Kurukshetra, 136119, India
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Accepted: 16 November 2020
Published online: 20 November 2020
Using density functional theory, we predict junctionless magnetoresistive device (JMD) using edge-passivated zigzag aluminium nitride nano-ribbon (ZAlNNR) for application in magnetoresistive random access memories (MRAMs). The results suggest that the conductivity of ZAlNNR can be modulated by passivating the nano-ribbon edges with hydrogen (H) and fluorine (F) atoms. A semiconducting ZAlNNR results when aluminium (Al) and nitrogen (N) atoms on both the edges of ZAlNNR are passivated by hydrogen or fluorine. A half-metallic nano-ribbon results when the edge consisting of aluminium atoms is passivated by hydrogen or fluorine, whereas a metallic nano-ribbon results when the edge consisting of nitrogen atoms is passivated by hydrogen or fluorine. A junctionless ZAlNNR JMD can thus be formed by selectively passivating the electrodes (half-metallic) and central region (semiconducting). The fluorine-passivated junctionless device offers higher magneto-resistance (MR) and better spin-filtering effect in comparison with hydrogen-passivated device. Smaller device fabrication complexity can also be expected due to a junctionless structure.
© Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature, 2020